Al 113 Germanium Transistor 100V 10a 6W

Type Designator: AL113

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 100 °C

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3